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TLP3527 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP3527 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TLP3527 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 µA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off -state current IDRM VDRM=600V, Ta=110°C ― ― 100 µA Peak on -state voltage VTM ITM=1.5A ― ― 3.0 V Holding current IH RL=100Ω ― ― 25 mA Critical rate of rise of off -state voltage dv / dt Vin=240Vrms (fig.1) ― 500 ― V / µs Critical rate of rise of commutating voltage dv / dt (c) Vin=240Vrms, IT=1.0Arms (fig.1) ― 5 ― V / µs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT=6V ― ― 10 mA Inhibit voltage VIH IF=Rated IFT ― ― 50 V Leakage in inhibited state IIH IF=Rated IFT VT=Rated VDRM ― 200 ― µA Capacitance (input to output) CS VS=0, f=1MHz ― 1.5 ― pF Isolation resistance RS VS=500V 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Fig.1: dv / dt test circuit 5V, VCC 0V dv / dt (c) dv / dt ~ Rin RL Vin 2 3 15 VCC 120Ω + - 13 11 9 |
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