d 

8 GHz Wideband NPN Chip – 2SC5635

Rev 1.0

02/07/19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

SYMBOL

Collector Cut-off Current

-

-

1

µA

Emitter Cut-off Current

-

-

1

µA

DC Current Gain

50

-

250

-

Transition Frequency

5

8

-

GHz

2

Insertion Power Gain

f = 1 GHz

9

12

-

dB

NF

Noise Figure

f = 1 GHz

-

1.4

-

dB

Collector Output

Capacitance

f = 1MHz

-

1

-

pF

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Collector-Base Voltage

Open Emitter

-

15

V

Collector-Emitter Voltage

Open Base

-

6

V

Emitter-Base Voltage

Open Collector

-

1.5

V

DC Collector Current

-

-

50

mA

1

Total Power Dissipation

-

-

125

mW

Storage Temperature

-

-65

150

ºC

Junction Temperature

-

-

175

ºC

Typical Characteristics

FIGURE 1. Gain Bandwidth Product

versus Collector Current

FIGURE 2. Insertion Power Gain

versus Collector Current – 3V

1. Measured in plastic SC-70 package, results in die form are dependent on die attach and assembly method.

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