Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CSC4115

(9AW)

TO-92

BCE

MARKING : CSC

4115

BC

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

BVCBO

40

V

Collector Emitter Voltage

BVCEO

20

V

Emitter Base Voltage

BVEBO

6.0

V

Collector Current

IC

2.0

A

Collector Current Peak

ICP*

5.0

A

Collector Power Dissipation

PC

0.4

W

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

*Single Pulse Pw=10ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

BVCBO

IC=50uA, IE=0

40

-

-

V

Collector Emitter Voltage

BVCEO

IC=1mA, IB=0

20

-

-

V

Emitter Base Voltage

BVEBO

IE=50uA, IC=0

6.0

-

-

V

Collector Cut off Current

ICBO

VCB=30V, IE=0

-

-

0.1

uA

ICEO

VCE=20V, IB=0

-

-

1.0

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

0.1

uA

DC Current Gain

hFE

VCE=2V, IC=0.1A

120

-

560

Collector Emitter Saturation Voltage

VCE(Sat)

IC=2A, IB=0.1A

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=2V, IC=0.5A,

-

150

-

MHz

f=100MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

25

-

pF

f=1MHz

Hfe Classifications

A 120-270;

B 180-390;

C 270-560;

"For BC" 180- 560

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

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