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US1AF Datasheet(PDF) 1 Page - Shanghai Yint Electronic Co., Ltd |
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US1AF Datasheet(HTML) 1 Page - Shanghai Yint Electronic Co., Ltd |
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1 / 3 page ![]() SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Trustworthy electronic circuit protection expert US1AF THRU US1MF www.yint.com.cn 1 Rev:19.3 US1AF THRU US1MF Features ● For surface mounted applications ● Low profile package ● Glass Passivated Chip Junction ● Easy to pick and place ● High efficiency ● Lead free in comply with EU RoHS 2011/65/EU directiv Mechanical Data ● Case:SMAF ● Terminals: Solderable per MIL-STD-750, Method 20 ● Approx. Weight: 27mg / 0.00095oz Simplified outline SMAF and symbol Pinning PIN DESCRIPTION 1 Cathode 2 Anode Absolute Maximum Ratings And Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols US1AF US1BF US1DF US1GF US1JF US1KF US1MF Units Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Tc = 125 °C IF(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load IFSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.0 1.3 1.65 V Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C IR 5 100 μ A Maximum Reverse Recovery Time(1) trr 50 75 ns Typical Junction Capacitance (2) C j 15 pF Typical Thermal Resistance(3) RθJA 80 ℃ /W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃ ( 1)Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A ( 2)Measured at 1 MHz and applied reverse voltage of 4 V D.C ( 3)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas |
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