SC1065F datasheet(2/6 Pages) JINGHENG

Part #	SC1065F

Description	SILICON CARBIDE SCHOTTKY DIODE

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	JINGHENG [Jinan Jing Heng Electronics Co., Ltd.]

Direct Link	http://www.jinghenggroup.com/

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2 / 6 page

MAXIMUM RATINGS

(Ratings at 25°C ambient temperature unless otherwise specified )

Parameter

Symbol

Value

Unit

Maximum repetitive peak reverse voltage

R R M

650

Continuous Forward Current for Rth

( j - c )

10（T ≤156℃ TO-220/TO-263)

10（Tc≤135℃ TO-252/ITO-220)

Non-Repetitive Forward Surge Current

（Half-Sine Pulse,tp=8.3mS)

F, S M

85(25℃)

75(150℃)

I t value

∫i t

30（25℃ ）

23（150℃ ）

A S

Diode dv/dt ruggedness(VR=0...650V)

dv/dt

V/nS

Power dissipation for R

（Tc=25℃）

t h ( j - c , m a x )

t o t

125(TO-220/TO-263)

60(TO-252/ITO-220)

Operating junction temperature range

-55...175

℃

Storage temperature range

Tstg

-55...175

℃

RATINGS AND CHARACTERISTIC OF SC1065XX

THERMAL CHARACTERISTCS（TA=25℃ Unless otherwise noted)

JINAN JINGHENG ELECTRONICS

CO., LTD.

HTTP

://WWW.JINGHENG.CN

6-2

Paramerter

Symbol

ITO-220AC

TO-220AC

TO-263AC

TO-252AC

Unit

Diode thermal resistance

junction-case

t h ( j - c )

2.5

1.2

2.5

K/W

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