SEMICONDUCTOR

TECHNICAL DATA

FDR2020WS

2016. 07. 13

1/4

Revision No : 0

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Very Small SMD Package

APPLICATIONS

Low Voltage Rectification

High Efficiency DC/DC Conversion

Switch Mode Power Supply

Inverse Polarity Protection

Low Power Consumption Applications

MARKING: SH

a

r

a

P

l

o

b

m

y

S

meter

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

V

0

2

RMS Reverse Voltage

14

V

Continuous Forward Current

2

A

Non-repetitive Peak Forward Surge Current @ t=8.3ms

9

A

250

Power Dissipation

Note1

480

mW

Thermal Resistance from Junction to Ambient

Note1

400

Note2

208

℃/W

Junction Temperature

125

℃

Storage Temperature

-55~+150

℃

1: Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2. Device mounted on an FR4 PCB with copper pad 10 x 10 mm.

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse breakdown voltage

0

2

A

m

1

=

V

V

0

1

=

80

Reverse current

V

0

2

=

100

μA

A

1

=

0.45

Forward voltage

A

2

=

0.55

V

Total capacitance

z

H

M

1

120

pF

*Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SOD-323

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

Note2