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STM32L433CB Datasheet(PDF) 96 Page - STMicroelectronics |
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STM32L433CB Datasheet(HTML) 96 Page - STMicroelectronics |
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96 / 225 page ![]() Electrical characteristics STM32L433xx 96/225 DS11449 Rev 5 The requirements for power-up/down sequence specified in Section 3.9.1: Power supply schemes must be respected. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 24 are derived from tests performed under the ambient temperature conditions summarized in Table 22: General operating conditions. Table 24. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 V Falling edge 2.15 2.20 2.25 VPVD2 PVD threshold 2 Rising edge 2.41 2.46 2.51 V Falling edge 2.31 2.36 2.41 VPVD3 PVD threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VPVD4 PVD threshold 4 Rising edge 2.69 2.74 2.79 V Falling edge 2.59 2.64 2.69 VPVD5 PVD threshold 5 Rising edge 2.85 2.91 2.96 V Falling edge 2.75 2.81 2.86 VPVD6 PVD threshold 6 Rising edge 2.92 2.98 3.04 V Falling edge 2.84 2.90 2.96 Vhyst_BORH0 Hysteresis voltage of BORH0 Hysteresis in continuous mode -20 - mV Hysteresis in other mode -30 - |
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