STUSB4710ADTR datasheet(24/34 Pages) STMICROELECTRONICS

24 / 34 page

Electrical characteristics

STUSB4710

24/34

DocID030499 Rev 4

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBUS monitoring and driving

VTHUSB

VBUS presence

threshold

3.8

3.9

VTH0V

VBUS safe 0 V

threshold

(vSafe0V)

Programmable threshold

(from 0.6 to 1.8 V)

Default VTHOV = 0.6 V

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.7

1.8

1.9

RDISUSB

VBUS discharge

resistor

600

700

800

TDISUSB

VBUS discharge

time to 0 V

Default TDISUSB= 840 ms. The

coefficient TDISPARAM is

programmable by NVM

*TDISPARAM

100

*TDISPARAM

TDISUSB

VBUS discharge

time to PDO

Default TDISUSB= 200 ms

The coefficient TDISPARAM is

programmable by NVM

*TDISPARAM

VMONUSBH

VBUS monitoring

high voltage

threshold

VBUS = nominal target

value

Default VMONUSBH = VBUS

+10%

The threshold limit is

programmable by NVM

from VBUS +5% to VBUS

+20%

–

VBUS +10%

–

VMONUSBL

VBUS monitoring

low voltage

threshold

VBUS = nominal target

value

Default VMONUSBL= VBUS -

10%

The threshold limit is

programmable by NVM

from VBUS -20% to VBUS -

–

VBUS -10%

–

Digital input/output (SCL, SDA)

VIH

High level input

voltage

1.2

–

VIL

Low level input

voltage

–

0.35

VOL

Low level output

voltage

Ioh = 3 mA

–

0.4

20 V open-drain outputs (VBUS_EN_SRC)

VOL

Low level output

voltage

Ioh = 3 mA

–

0.4

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