ES2DVR datasheet(6/14 Pages) NEXPERIA

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NXP Semiconductors

ES2DVR

200 V, 2 A hyperfast PN-rectifier

ES2DVR

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Product data sheet

12 January 2017

5 / 13

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)R

reverse breakdown

voltage

IR = 100 µA; Tj = 25 °C; pulsed

[1]

200

IF = 2 A; pulsed; Tj = 25 °C

[1]

890

950

forward voltage

IF = 2 A; pulsed; Tj = 125 °C

[1]

750

825

VR = 200 V; pulsed; Tj = 25 °C

[1]

200

reverse current

VR = 200 V; pulsed; Tj = 125 °C

[1]

1.5

µA

diode capacitance

f = 1 MHz; VR = 4 V; Tj = 25 °C

reverse recovery time ;

step recovery

IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;

Tj = 25 °C

trr

reverse recovery time ;

ramp recovery

IF = 1 A; dIF/dt = 50 A/µs; VR = 30 V;

Tj = 25 °C

VFRM

peak forward recovery

voltage

IF = 1 A; dIF/dt = 50 A/µs; Tj = 25 °C

930

[1] Very short test pulse to keep the junction termperature unchanged.

aaa-026147

10-2

10-3

10-1

(A)

10-4

VF (V)

1.4

1.0

1.2

0.8

0.6

0.2

0.4

(1)

(2)

(3)

(4)

(5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = -40 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

aaa-026148

10-8

10-10

10-9

10-6

10-7

10-5

(A)

10-11

VR (V)

200

160

120

(1)

(2)

(3)

(4)

(5)

pulsed condition

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 4. Reverse current as a function of reverse

voltage; typical values

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