BC846BMB

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 15 May 2012

3 of 11

NXP Semiconductors

BC846BMB

65 V, 100 mA NPN general-purpose transistor

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

80

V

collector-emitter voltage

open base

-

65

V

emitter-base voltage

open collector

-

6

V

collector current

-

100

mA

peak collector current

single pulse;

-200

mA

peak base current

single pulse;

-200

mA

total power dissipation

[1] -250

mW

junction temperature

-

150

C

ambient temperature

65

+150

C

storage temperature

65

+150

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

10

1

10

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0