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BCV27 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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BCV27 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 3 page  Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage BCV27 BCV47 VCBO 40 80 V Collector Emitter Voltage BCV27 BCV47 VCEO 30 60 V Emitter Base Voltage VEBO 10 V Collector Current IC 500 mA Peak Collector Current ICM 800 mA Base Current IB 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 hFE hFE hFE hFE hFE hFE 4000 2000 10000 4000 20000 10000 - - - - - - - - - - - - - - - - - - Collector Base Cutoff Current at VCB = 30 V at VCB = 60 V BCV27 BCV47 ICBO - - - - 100 100 nA Emitter Base Cutoff Current at VEB = 10 V IEBO - - 100 nA Collector Base Breakdown Voltage at IC = 100 µA BCV27 BCV47 V(BR)CBO 40 80 - - - - V Collector Emitter Breakdown Voltage at IC = 10 mA BCV27 BCV47 V(BR)CEO 30 60 - - V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 10 - - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA VCE(sat) - - 1 V Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA VBE(sat) - - 1.5 V Base Emitter On-state Voltage at IC = 10 mA, VCE = 5 V VBE(on) - - 1.4 V Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz fT - 220 - MHz BCV27/BCV47 NPN Darlington Transistors SOT-23 1.Base 2.Emitter 3.Collector Marking : BCV27 : FF BCV47 : FH 1 / 3 www.pingjingsemi.com Revision：1.0 Aug-2018 Features High Collector Current. High Current Gain. |
Similar Part No. - BCV27 |
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Similar Description - BCV27 |
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