FMMT717 datasheet(2/4 Pages) PJSEMI

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Revision：1.0 Dec-2018

FMMT717

PNP Transistor

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain Note1

at -VCE = 2 V, -IC = 10 mA

at -VCE = 2 V, -IC = 100 mA

at -VCE = 2 V, -IC = 2.5 A

at -VCE = 2 V,-IC = 8 A

HFE

300

Collector Base Cutoff Current

at -VCB = 10 V

-ICBO

100

Emitter Base Cutoff Current

at -VCB = 4 V

-IEBO

100

Collector Base Breakdown Voltage

at -IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at -IC = 10 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at -IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage Note1

at -IC = 100 mA, -IB = 10 mA

at -IC =1 A, -IB = 10 mA

at -IC = 1.5 A, -IB = 50 mA

at -IC = 2.5 A, -IB = 50 mA

VCE(sat)

Base Emitter Saturation Voltage

at -IC = 2.5 A, -IC = 50 mA

VBE(sat)

1.0

Base Emitter Voltage Note1

at -VCE = 2 V, -IC = 2.5 A

VBE(on)

1.0

Transition Frequency

at -VCE = 10 V, -IC = 50 mA

150

MHz

180

140

170

Collector Output Capacitance

at -VCB = 10 V, f= 1MHz

Turn-on Time

at -VCC = 10 V, -IC =1 A , IB1 =IB2 = -20 mA

Turn-off Time

at -VCC = 10 V, -IC =1 A, IB1 =IB2 = -20 mA

Cob

t(on)

t(off)

670

Note: 1. Measured under pulsed conditions, Pulse width ≤ 300 us, Duty cycle ≤ 2%.

220

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