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ISCN171E Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCN171E
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN171E Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCN171E
DESCRIPTION
·
High Collector Current- IC= 3A
·
Collector-Emitter Breakdown Voltage-
V(BR)CEO=60V(Min)
·
Good Linearity of hFE
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Pulse
7
A
PC
Collector Power Dissipation
@ TC=25℃
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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