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FTC1815 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTC1815 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  General Purpose NPN Transistor FEATURES MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100uA, IC=0 5 V Collector cut-off current ICBO VCB= 60V,IE=0 0.1 uA Collector cut-off current ICEO VCE= 50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA DC current gain hFE VCE= 6 V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT VCE=10 V, IC= 1mA f=30MHz 80 MHz Collector Output Capacitance Cob VCB=10V,IE=0 f=1MHz 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA f =1KHz,RG=10K 10 dB CLASSIFICATION OF hFE Rank L B R G Y O Range 70-140 120-240 200-400 350-700 SEMICONDUCTOR TECHNICAL DATA FTC1815 2009. 04. 20 1/2 Revision No : 0 TO-92 DIM MILLIMETERS A B C D F G H J L 4.70 MAX 4.80 MAX 3.70 MAX 1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B G H F F E C E 0.51 MAX M + _ 0.55 MAX 1. EMITTER 2. COLLECTOR 3. BASE |
Similar Part No. - FTC1815 |
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Similar Description - FTC1815 |
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