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SWI1008UF-R22G Datasheet(PDF) 1 Page - TAI-TECH Advanced Electronics Co., Ltd. |
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SWI1008UF-R22G Datasheet(HTML) 1 Page - TAI-TECH Advanced Electronics Co., Ltd. |
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1 / 2 page ![]() TAI-TECH www.tai-tech.com.tw P2 1. Features 2. Dimensions 3. Part Numbering 4. Specification SWI 1008 U F - 10N J A B C D E F A: Series B: Dimension LxW C: Material D: Lead Free Code E: Inductance 10N=10nH F: Inductance Tolerance G=±2%, J=±5%, K=±10% Size A(mm) B(mm) C(mm) D(mm) E(mm) SWI1008 2.92 max. 2.79 max. 2.20 max. 1.20 ref. 0.55±0.1 Unit:mm 1. Ceramic core wire wound construction. 2. No batch to batch variations in inductance 3. High Reliability due to ceramic wire wound construction. 4. High frequency application. 5. Small footprint as well as low profile. 6. 100% Lead(Pb) & Halogen-Free and RoHS compliant. 7. Operating temperature -40~+125℃ (Including self - temperature rise) High Frequency Winding Type Chip Inductor SWI1008UF-SERIES Part Number Inductance (nH) Tolerance Test Frequency (Hz) Q @ Test Freq. min. Rated Current (mA) max. DCR (Ω) max. SRF (MHz) min. SWI1008UF-10N□ 10 G, J, K 0.1V/50M 50/500 1000 0.08 4100 SWI1008UF-12N□ 12 G, J, K 0.1V/50M 50/500 1000 0.09 3300 SWI1008UF-15N□ 15 G, J, K 0.1V/50M 50/500 1000 0.18 2500 SWI1008UF-18N□ 18 G, J, K 0.1V/50M 50/350 1000 0.11 2500 SWI1008UF-22N□ 22 G, J, K 0.1V/50M 55/350 1000 0.12 2400 SWI1008UF-27N□ 27 G, J, K 0.1V/50M 55/350 1000 0.13 1600 SWI1008UF-33N□ 33 G, J, K 0.1V/50M 60/350 1000 0.14 1600 SWI1008UF-39N□ 39 G, J, K 0.1V/50M 60/350 1000 0.15 1500 SWI1008UF-47N□ 47 G, J, K 0.1V/50M 65/350 1000 0.16 1500 SWI1008UF-56N□ 56 G, J,K 0.1V/50M 65/350 1000 0.18 1300 SWI1008UF-68N□ 68 G, J,K 0.1V/50M 65/350 1000 0.20 1300 SWI1008UF-82N□ 82 G, J,K 0.1V/50M 60/350 1000 0.22 1000 SWI1008UF-R10□ 100 G, J,K 0.1V/25M 60/350 650 0.56 1000 SWI1008UF-R12□ 120 G, J,K 0.1V/25M 60/350 650 0.63 950 Halogen-free Halogen |
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