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MBR1060CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR1060CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR1060CT FEATURES · Low Forward Voltage · Low Power Loss/High Efficiency · High Surge Capacity · Low Stored Charge Majority Carrier Conduction · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 100℃ 10 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 125 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Similar Part No. - MBR1060CT |
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Similar Description - MBR1060CT |
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