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2SC1654 Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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2SC1654 Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 2 page  Silicon Epitaxial Planar Transistor 2SC1654 FEATURES High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA). High voltage. APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC1654 N5/N6/N7 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=130V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=3V,IC=15mA VCE=3V,IC=1mA 90 70 200 180 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.1 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.73 1 V Transition frequency fT VCE=10V, IE=- 10mA 120 MHz Output capacitance Cob VCB=10V, IE=0,f=1MHz 2.3 pF CLASSIFICATION OF hFE(1) Range 90-180 135-270 200-400 Marking N5 N6 N7 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 |
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