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KTC4075 Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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KTC4075 Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 2 page  NPN Silicon Epitaxial Planar Transistor KTC4075 FEATURES High and excellent DC current gain. Complementary to KTA2014. Small package. APPLICATIONS General purpose application. Switching application. ORDERING INFORMATION Type No. Marking Package Code KTC4075 LO/LY/LGR/LBL SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA IB Base Current 30 mA PC Collector Power Dissipation 100 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA, f=1kHz,Rg=10kΩ 1.0 10 dB CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G |
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