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2SC5302 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5302 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION · High Breakdown Voltage :VCBO= 1500V (Min) · High Speed Switching · High Reliability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 35 A PC Collector Power Dissipation @Ta=25℃ 3 W Collector Power Dissipation @TC=25℃ 75 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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