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2SD2162 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD2162 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD2162 DESCRIPTION · High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) · Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low-frequency power amplifiers and low- speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation @Ta=25℃ 2 W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
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