TIP31CS datasheet(1/1 Pages) FS

Part #	TIP31CS

Description	TRANSISTOR (NPN)

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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SEMICONDUCTOR

TECHNICAL D ATA

TIP31CS

2011. 09. 27

1/1

Revision No : 0

TIP31CS

TRANSISTOR (NPN)

FEATURES

Complementary to TIP32CS

Power amplifier applications up to 3.0 amps.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

A

3

s

u

o

u

n

i

t

n

o

C

-

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

1

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

5

6

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

~150

ELECTRICAL CHARACTERISTICS(Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1m A,IE

V

0

1

0

=

Collector-emitter breakdown voltage

V(BR)CEO

IC=30mA,IB

V

0

1

0

=

Emitter-base breakdown voltage

V(BR)EBO

IE=3mA,IC

V

5

0

=

Collector cut-off current

ICBO

VCB=100V,IE

A

u

0

2

0

=

Base cut-off current

ICEO

VCE=60V,IB

A

u

0

3

0

=

Emitter cut-off current

IEBO

VEB=5V,IC

A

m

1

0

=

hFE(1)*

VCE=4V,IC

5

2

A

1

=

DC current gain

hFE(2) *

VCE=4V,IC

0

1

0

1

A

3

=

Collector-emitter saturation voltage

VCE(sat) *

IC=3.0A,IB=375mA

1.2

V

Base-emitter voltage

VBE *

VCE=4V,IC

V

8

.

1

A

3

=

Transition frequency

fT

VCE=10V,IC=500mA,f=1MHz

3

MHz

* Pulsed , 2%D.C.

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

℃

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