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TIP120 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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TIP120 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2011. 10. 14 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA TIP120,121,122 TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 Units VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 2 W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W RθJc Thermal Resistance Junction to Case 1.92 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 V(BR)CBO IC= 1mA,IE=0 60 80 100 V Collector-emitter breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 VCEO(SUS) IC= 30mA,IB=0 60 80 100 V Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 ICBO VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0 0.2 mA Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 ICEO VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0 0.5 mA Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA hFE(1) VCE= 3V, IC=0.5A 1000 DC current gain hFE(2) VCE= 3V, IC=3 A 1000 Collector-emitter saturation voltage VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA 2 4 V Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V Output Capacitance TIP125,TIP126,TIP127 TIP120,TIP121,TIP122 Cob VCB=10V, IE=0,f=0.1MHz 300 200 pF TO-220 1.BASE 2.COLLECTOR 3.EMITTER |
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