PRELIMINARY

FPD2000V

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 4/29/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

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PERFORMANCE (1.8 GHz)

♦ 33 dBm Linear Output Power

♦ 14.5 dB Power Gain

♦ Useable Gain to 10 GHz

♦ 44 dBm Output IP3

♦ 20 dB Maximum Stable Gain

♦ 45% Power-Added Efficiency

♦ 10V Operation / Plated Source Thru-Vias

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DESCRIPTION AND APPLICATIONS

The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.

The

FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

32

33

dBm

Power Gain at dB Gain Compression

13.0

14.5

Maximum Stable Gain

MSG

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

45

%

IM3

-46

dBc

Saturated Drain-Source Current

975

1150

1375

mA

Maximum Drain-Source Current

1800

mA

Transconductance

1200

mS

Gate-Source Leakage Current

35

85

µA

Pinch-Off Voltage

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

6

8

V

Gate-Drain Breakdown Voltage

20

22

V

Thermal Resistivity

See Note on following page

18

°C/W

DRAIN

BOND

PAD (2X)

GATE

BOND

PAD (2X)

DIE SIZE (

µm): 650 x 800

DIE THICKNESS: 75

µm

BONDING PADS (

µm): >70 x 70