FPD2250

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

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FEATURES

♦ 32 dBm Linear Output Power at 12 GHz

♦ 7.5 dB Power Gain at 12 GHz

♦ 42 dBm Output IP3

♦ 45% Power-Added Efficiency

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DESCRIPTION AND APPLICATIONS

The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25

µm by 2250 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance. The epitaxial structure and processing have been optimized for reliable high-power

ceramic package and in the low cost plastic SOT89 plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

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ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

31.0

32.0

dBm

MSG

8.0

9.0

dB

6.5

7.5

dB

Power-Added Efficiency

PAE

45

%

Output Third-Order Intercept Point

IP3

Matched for optimal power

Tuned for best IP3

40

42

dBm

Saturated Drain-Source Current

560

700

825

mA

Maximum Drain-Source Current

1125

mA

Transconductance

600

mS

Gate-Source Leakage Current

10

µA

Pinch-Off Voltage

1.0

V

Gate-Source Breakdown Voltage

12.0

14.0

V

Gate-Drain Breakdown Voltage

14.5

16.0

V

Thermal Resistivity (see Notes)

30

°C/W

DRAIN

BOND

PAD (2X)

SOURCE

BOND

PAD (2x)

GATE

BOND

PAD (2X)

DIE SIZE (

µm):: 680 x 470

DIE THICKNESS: 75

µm

BONDING PADS (

µm): > 85 x 60