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PJM7N02SA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM7N02SA
Description  Silicon N-Channel Power MOSFET
PDF  5 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM7N02SA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM7N02SA
Silicon N-Channel Power MOSFET
www.pingjingsemi.com
1 / 5
Revision：1.0 May-2018
Features
Fast switching
Low gate charge and RDS(ON)
VDS=20V
ID=7A
PD=1.
2W
RDS(ON)=26 mΩ(max) @10V
Application
Load/ power switching
Small portable electronics
Mark: M20
Absolute Maximum Ratings (Ta=25℃unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID
Continuous Drain Current
7
A
IDM(1)
Pulsed Drain Current
30
A
RθJA
Thermal Resistance from Junction toAmbient
104
℃
/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
260
℃
Notes:1.Repetitive rating; pulse width limited by maximum junction temperature
3D
1G
2S


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