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PJM2302NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2302NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 8 page  Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 3.3 A Drain Current-Pulsed Note 1 IDM 16 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Parameter Symbol Limit Unit Thermal Resistance,Junction-to-Ambient Note 2 RθJA 139 ℃ /W PJM2302NSA N- Enhancement Mode Field Effect Transistor 1 / 8 SOT-23 Schematic diagram 1 2 Gate Source 3Drain Features ⚫ Fast Switching ⚫ Low Gate Charge and RDS(on) ⚫ High power and current handing capability Applications ⚫ Battery protection ⚫ Load switch ⚫ Power management Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Thermal Characteristics 1. Gate 2.Source 3.Drain Marking: M22 www.pingjingsemi.com Revision：2.0 May-2019 |
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