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PJM6025NTD Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM6025NTD
Description  Silicon N-Channel Power MOSFET
PDF  5 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM6025NTD Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM6025NTD
Silicon N-Channel Power MOSFET
www.pingjingsemi.com
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Revision：1.0 Nov-2017
Thermal Characteristics
Parameter
Symbol
Value
Units
Thermal Resistance, Junction-to-Case Note 1
RθJC
3.0
℃/W
Electrical Characteristics
Ratings at TC = 25
℃ unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250μA
60
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
-
3.0
V
Gate Leakage Current
IGSS
VDS = 0V, VGS = ±20V
-
-
±1
μA
Zero Gate Voltage Drain Current
IDSS
VDS =60V, VGS = 0V
TA = 25
℃
-
-
1.0
μA
VDS =48V, VGS = 0V
TA = 125
℃
-
-
250
Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 20A
-
25
30
mΩ
Dynamic Characteristics
Total Gate Charge
Qg
VDD = 30V, VGS = 10V,
ID = 4.5A,
-
11
-
nC
Gate-Source Charge
Qgs
-
6
-
Gate-Drain Charge
Qgd
-
3
-
Input Capacitance
Ciss
VDS = 30V, VGS = 0V,
f = 1MHz
-
500
-
pF
Output Capacitance
Coss
-
60
-
Reverse Transfer Capacitance
Crss
-
25
-
Turn-On Delay Time
td(on)
VDD = 30V, Rg = 3.0 Ω,
VGS = 10V, ID = 2A,
-
6
-
ns
Turn-On Rise Time
tr
-
2.8
-
Turn-Off Delay Time
td(off)
-
9
-
Turn-Off Fall Time
tf
-
5
-
Forward Transconductance
gfs
VDS=5V, ID =5A
11
-
-
S
Source-Drain Diode Characteristics
Diode Forward Current
ISD
-
-
25
A
Diode Forward Voltage
VSD
IS= 25 A, VGS = 0V
-
-
1.5
V
Reverse Recovery Time
trr
IS=25A, TJ=25℃
dIF/dt=100A/μs, VGS=0V
-
35
-
ns
Reverse Recovery Charge
Qrr
-
50
-
μC



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