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PJM6050NTK Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM6050NTK
Description  Single N?묬hannel Power MOSFET
PDF  3 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM6050NTK Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM6050NTK
Single N−Channel Power MOSFET
2 / 3
www.pingjingsemi.com
Revision：1.0
Dec-2017
Thermal Characteristics
Symbol
Parameter
Rating
Units
RθJCa2
Thermal Resistance,Junction-to-Case
1.2
℃
/ W
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Units
Min. Typ. Max.
Off Characteristics
VDSS
Drain to Source Breakdown Voltage
VGS=0V,ID=250µA
60
--
--
V
IDSS
Drain to Source Leakage Current
VDS=60V, VGS=0V,Ta=25℃
--
--
1
µA
IGSS(F)
Gate to Source Forward Leakage
VGS=+30V
--
--
0.1
µA
IGSS( R)
Gate to Source Reverse Leakage
VGS=-30V
--
--
-0.1
µA
On Characteristicsa3
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=25A
--
18
22
mΩ
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
3.0
4.0
V
gfs
Forward Trans conductance
VDS=
30V,ID=25A
30
--
--
S
Pulse width<380μs;duty cycle<2%.
Dynamic Characteristicsa4
Ciss
Input Capacitance
VGS=0V,VDS=25V,f=1.0MHz
--
920
--
pF
Coss
Output Capacitance
--
420
--
Crss
Reverse Transfer Capacitance
--
80
--
Resistive Switching Characteristicsa4
td(ON)
Turn-on Delay Time
ID=50A,VDD=30V
VGS=10V,Rg=3Ω
RL=50Ω
--
40
--
ns
tr
Rise Time
--
100
--
td(OFF)
Turn-Off Delay Time
--
90
--
tf
Fall Time
--
75
--
Qg
Total Gate Charge
ID=50A,VDD=30V, VGS=10V
--
35
--
nC
Qgs
Gate to Source Charge
--
7.0
--
Qgd
Gate to Drain (“ Miller ”)Charge
--
16
--
Source-Drain Diode Characteristics
ISDa2
Continuous Source Current (Body Diode)
--
--
50
A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
--
--
1.5
V
Pulse width<380μs;duty cycle<2%.
a1:Repetitive Rating: Pulse width limited by maximum junction temperature.
a2:Surface Mounted on FR4 Board, t≤10sec.
a3:Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
a4:Guaranteed by design, not subject to production
a5:EAS condition：Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω



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