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PJM7002NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM7002NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM7002NSA N-Enhancement Field Effect Transistor 1 / 6 www.pingjingsemi.com Revison：1.1 Dec-2018 Features High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability High speed switching Application PWM applications Load switch Power management Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 115 mA Pulsed Drain Current IDM 800 mA Total Power Dissipation PD 200 mW Operating Junction Temperature TJ 150 O C Storage Temperature TSTG - 55 to + 150 O C SOT-23 1 2 Gate Source 3Drain Schematic diagram Thermal Resistance,Junction-to-Ambient Note2 RθJA 625 ℃ / W Thermal Characteristics 1. Gate 2.Source 3.Drain Marking: S72 |
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