PJM07P20SA datasheet(2/6 Pages) PJSEMI

2 / 6 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID =-250µA

Zero gate voltage drain current

-IDSS

VDS =-2

0V,VGS = 0V

µA

Gate-source leakage current

IGSS

VGS =±

12V, VDS = 0V

±100

Drain-source on-resistance Note2

RDS(on)

VGS =-10V, ID =-4.1A

mΩ

VGS =-4.5V, ID =-3A

mΩ

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

0.5

0.75

1.4

Dynamic Characteristics

Input capacitance

Ciss

VDS =-15V,VGS =0V,f =1MHz

700

Output capacitance

Coss

120

Reverse transfer capacitance

Crss

Switching Characteristics

Turn-on delay time

td(on)

VGS=-10V,VDS=-15V,

RL=3.6Ω,RGEN=3Ω

8.6

Turn-on rise time

5.0

Turn-off delay time

td(off)

28.2

Turn-off fall time

13.5

Notes:

Surface mounted on FR4 board，t ≤ 10 sec.

Pulse test: Pulse width ≤300µs, duty cycle ≤2%.

PJM07P20SA

P Enhancement Field Effect Transistor

2 / 6

Electrical Characteristics (TA=25℃ unless otherwise specified)

Source-Drain Diode Characteristics

Diode forward voltage

VSD

IS=-1A,VGS=0V

-1

Forward tranconductance Note2

gFS

VDS =-5V, ID =-4A

5.5

www.pingjingsemi.com

Revision：1.0 Jun-2019

PJM07P20SA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM07P20SA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL