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PJM3401PSC Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM3401PSC
Description  P-Channel Power MOSFET
PDF  7 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3401PSC Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3401PSC
P-Channel Power MOSFET
2 / 7
Electrical Characteristics (TC=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min.
Typ.
Max. Units
Static Characteristics
Drain-source breakdown voltage
-V(BR)DSS
VGS = 0V, ID=-
250µA
30
V
Drain to Source Leakage Current
-IDSS
VDS =-
30V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±
12V, VDS = 0V
±100
nA
Gate threshold voltage Note2
-VGS(th)
VDS =VGS, ID =-250µA
0.7
1.3
V
Drain-source on-resistance Note2
RDS(on)
VGS =-
10V, ID =-4.1A
60
mΩ
VGS =-
4.5V, ID =-4A
70
mΩ
Forward tran
sconductance Note2
gFS
VDS =-5V, ID =-
5A
S
Dynamic characteristics
Input Capacitance
Ciss
VDS = -
15V,VGS = 0V,f=1MHz
880
pF
Output Capacitance
Coss
105
Reverse Transfer Capacitance
Crss
65
Switching Characteristics
Turn-on delay time
td(on)
VDS=-15V,
VGS=-
10V，RGEN
=
6Ω, ID=-4.2A
7
ns
Turn-on rise time
tr
3
Turn-off delay time
td(off)
30
Turn-off fall time
tf
Total gate charge
Qg
VDD =-
15V,VGS =-4.5V,ID =-4.2A
12
nC
Gate-source charge
Qgs
1.8
Gate-drain charge
Qgd
2.7
Source-Drain Diode characteristics
Diode Forward voltage
-VDS
VGS =0V, IS=-
4.2A
1.2
V
8.5
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1
www.pingjingsemi.com
Revision：1.
0 Jun-2019
Notes:
1.
Surface mounted on FR4 board，t ≤ 10 sec.
2.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
--
VGS =-
2.5V, ID =-1A
90
mΩ
--
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