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PJM3404NSQ Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM3404NSQ Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 7 page  Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient Note2 RθJA 83 ℃ / W PJM3404NSQ N- Enhancement Mode Field Effect Transistor 1 / 7 Applications Load switch and in PWM applications Features VDS = 30V,ID = 5.8A RDS(ON) < 28mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V Low Gate Charge and RDS(on) High power and current handing capability Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Characteristics www.pingjingsemi.com Revision：1.0 Jun-2019 SOT-89 3 1Gate Source 2Drain Schematic diagram 1. Gate 2.Drain 3.Source Marking: U4 |
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