2N6282 datasheet(1/2 Pages) ISC

Part #	2N6282

Description	isc Silicon NPN Darlingtion Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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isc Silicon NPN Darlingtion Power Transistor

2N6282

DESCRIPTION

·

Built-in Base-Emitter Shunt Resistors

·

High DC current gain-

hFE = 750 (Min) @ IC = 10 Adc

·

Collector-Emitter Sustaining Voltage-

VCEO(SUS)= 60V(Min)

·

Complement to type 2N6285

APPLICATIONS

·

Intended for general purpose amplifier and low frequency

switching applications, such as linear and switching indu-

strial equipment.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

ThermalResistance, Junction to Case

1.09

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current -Continuous

20

A

ICP

Collector Current-Peak

40

A

IB

Base Current

0.5

A

PC

Collector Power Dissipation@TC=25℃

160

W

Tj

Junction Temperature

-65~200

℃

Tstg

Storage Temperature

-65~200

℃

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