1N4148WS-BL datasheet(1/3 Pages) PJSEMI

Part #	1N4148WS-BL

Description	300mA, Silicon Epitaxial Planar Switching Diode

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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1N4148WS-BL(300mA)

Silicon Epitaxial Planar Switching Diode

Features



For surface mounted applications



Glass passivated chip junction



Fast reverse recovery time



Ideal for automated placement



Lead free in comply with EU RoHS

2011/65/EU directives

PINNING

Simplified outline SOD-323 and symbol

1

2

Absolute Maximum Ratings (at Ta = 25 °C)

Characteristics (at Ta = 25 °C)

Description

1

Cathode

2

Anode

Parameter

Symbols

Maximum Repetitive Peak Reverse Voltage

VRRM

100

V

Maximum RMS voltage

VRMS

75

V

Continuous Forward Current

IF

300

mA

Non-reptitive Peak Forward Surge Current

at 1ms

IFSM

4

A

Total Power Dissipation

Ptot

400

mW

Operating and Storage Temperature Range

TJ, Tstg

-55 ~ +150

°C

Parameter

Symbols

Reverse Breakdown Voltage

at IR=1μA

V(BR)R

75

V

Maximum Forward Voltage

a

at

IF =1 mA

at

IF =10 mA

at

IF =50 mA

at

IF =150 mA

VF

0.715

0.855

1.00

1.25

V

Peak Reverse Current

at VR=20V, TJ=25°C

at VR=75V, TJ=25°C

at VR=25V,TJ=150°C

at VR=75V,TJ=150°C

IR

0.025

1

30

50

μA

Typical Junction Capacitance

CJ

5

pF

Maximum Reverse Recovery Time

at IF = 0.5 A, IR = 1 A, Irr = 0.25 A

trr

Typical

8

ns

Units

1 / 3

www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Value

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1N4148WS-BL Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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