BAV23 datasheet(1/3 Pages) PJSEMI

Part #	BAV23

Description	Silicon Epitaxial Planar Diodes

PDF	3 Pages

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Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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High voltage switching diode

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Units

Maximum Repetitive Reverse Voltage

VRRM

250

V

Reverse Voltage

VR

200

V

Forward Current

IF(AV)

400

mA

Repetitive Peak Forward Current

IFRM

625

mA

Non-repetitive Peak Forward Surge Current

at t = 10 ms

at t = 100 μs

at t = 1 μs

IFSM

1.7

3

9

A

Power Dissipation

Ptot

350

mW

Thermal Resistance Junction to Ambient Air

RθJA

357

O

C/W

Operating Junction and Storage Temperature Range

Tj, Tstg

- 65 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

Reverse Breakdown Voltage

at IR = 100 µA

V(BR)R

250

-

V

Forward Voltage

at IF = 100 mA

at IF = 200 mA

VF

-

1

1.25

V

Reverse Current

at VR = 200 V, Tj = 25 OC

at VR = 200 V, Tj = 150 OC

IR

-

100

nA

µA

Total Capacitance

at VR = 0 V, f = 1 MHz

Ctot

-

5

pF

Reverse Recovery Time

at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω

trr

-

50

ns

1

3

2

3

1

2

1

3

2

1

3

BAV23

BAV23SE

BAV23CC

BAV23CA

BAV23

Marking:

HC

BAV23SE

Marking:

PY

BAV23CC

Marking:

PZ

BAV23CA

Marking:

RA

SOT-23

1

2

3

BAV23 / SE / CC / CA

Silicon Epitaxial Planar Diodes

1 / 3

www.pingjingsemi.com

Revision：1.0 Jun-2018

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BAV23 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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