BAV70 datasheet(1/3 Pages) PJSEMI

Part #	BAV70

Description	Silicon Epitaxial Planar Diodes

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

Direct Link	http://www.pingjingsemi.com/MainEn/Main.aspx

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BAV70

Silicon Epitaxial Planar Diodes

1 / 3

www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Features



Small package



Low forward voltage

3



Fast reverse recovery time



Small total capacitance

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Value

Unit

Maximum Peak Reverse Voltage

VRM

100

V

Reverse Voltage

VR

75

V

Average Forward Current

IO

200

mA

Maximum Peak Forward Current

IFM

300

mA

Non-Repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 µs

IFSM

1

2

A

Power Dissipation

PD

350

mW

Junction Temperature

TJ

150

O

C

Storage Temperature Range

TSTG

- 55 to + 150

O

C

Characteristics (Ta=25℃)

1

3

2

SOT-23

1

2

3

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

VF

-

715

855

1

1.25

mV

V

Reverse Current

at VR = 20 V

at VR = 75 V

at VR = 25 V, TJ = 150 OC

at VR = 75 V, TJ = 150 OC

IR

-

25

2.5

30

50

nA

µA

Reverse Breakdown Voltage

at IR = 100 µA

V(BR)R

75

-

V

Total Capacitance

at VR = 0 , f = 1 MHz

CT

-

2

pF

Reverse Recovery Time

at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω

trr

-

4

ns

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BAV70 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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