EPC2001C datasheet(2/6 Pages) EPC-CO

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eGaN® FET DATASHEET

EPC2001C

| 2

VDS – Drain-to-Source Voltage (V)

150

120

1.5

2.5

VGS

= 5 V

V = 4 V

V = 3 V

V = 2 V

VGS – Gate-to-Source Voltage (V)

150

120

0.5

1.5

2.5

3.5

4.5

VGS – Gate-to-Source Voltage (V)

2.5

3.5

4.5

VGS – Gate-to-Source Voltage (V)

2.5

3.5

4.5

ID = 25 A

25˚C

125˚C

Figure 1: Typical Output Characteristics at 25°C

Figure 2: Transfer Characteristics

Figure 3: RDS(on) vs. VGS for Various Currents

Figure 4: RDS(on) vs. VGS for Various Temperatures

0.5

ID = 10 A

ID = 20 A

ID= 40 A

ID= 80 A

VDS = 3 V

25°C

125°C

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VDS = 50 V, VGS = 0 V

770

900

COSS

Output Capacitance

430

650

CRSS

Reverse Transfer Capacitance

Gate Resistance

0.3

Total Gate Charge

VDS = 50 V, VGS = 5 V, ID = 25 A

7.5

QGS

Gate-to-Source Charge

VDS = 50 V, ID = 25 A

2.4

QGD

Gate-to-Drain Charge

1.2

QG(TH)

Gate Charge at Threshold

1.6

QOSS

Output Charge

VDS = 50 V, VGS = 0 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.

Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.

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