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WSF15P10 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF15P10
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF15P10 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF15P10 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF15P10 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF15P10 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF15P10 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF15P10 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.021
---
V/℃
VGS=-10V , ID=-
5.5A
---
150
205
RDS(ON)
Static Drain-Source On-Resistance
2
m
Ω
VGS(th)
Gate Threshold Voltage
-
1
---
-
3
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.08
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-10V , ID=-6A
---
8
---
S
Qg
Total Gate Charge (-4.5V)
---
21
---
Qgs
Gate-Source Charge
---
4.3
---
Qgd
Gate-Drain Charge
VDS=-
50V , VGS=-10V , ID=-5.5A
---
5.2
---
nC
Td(on)
Turn-On Delay Time
---
11
23
Tr
Rise Time
---
10
20
Td(off)
Turn-Off Delay Time
---
55
120
Tf
Fall Time
VDD=-
30V , VGS=-10V , RG=6Ω,
ID=-1A
,RG=30Ω.
---
30
65
ns
Ciss
Input Capacitance
---
1050
Coss
Output Capacitance
---
70
Crss
Reverse Transfer Capacitance
VDS=-
30V , VGS=0V , f=1MHz
---
30
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.
5mH , IAS=-10A
20
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-
2.0
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-
45
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
,t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.
5mH,IAS=-10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
WSF15P10
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2016
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