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2SC3907S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3907S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3907S DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) · Good Linearity of hFE · Complement to Type 2SA1516S · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power amplifier applications · Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 1.2 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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