AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Sep 22, 2005

3/8

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

-

8

-

P

-

8

-

N

-

9

-

Rise Time

P

-

9

-

N

-

17

-

Turn-Off Delay Time

P

-

25

-

N

-

5

-

Fall-Time

N-Channel

P-Channel

P

-

14

-

ns

N

-

630

1000

Input Capacitance

P

-

690

1100

N

-

140

-

Output Capacitance

P

-

170

-

N

-

65

-

Reverse Transfer Capacitance

N-Channel

f=1.0MHz

P-Channel

f=1.0MHz

P

-

75

-

pF

Source-Drain Diode

Limits

Symbol

Parameter

Test Conditions

CH

Min.

Typ.

Max.

Unit

N

-

-

1.2

P

-

-

-1.2

V

N

-

17

-

Reverse Recovery Time

P

-

25

-

ns

N

-

9

-

Reverse Recovery Charge

N-Channel

dl/dt=100A/µs

P-Channel

dl/dt=-100A/µs

P

-

20

-

nC

Note 1: Surface Mounted on 1 in

Note 2: Pulse width limited by Max. junction temperature

Note 3: Pulse width < 300us, duty cycle < 2%.