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PW113 Datasheet(PDF) 1 Page - SJM Prewell. All Rights Reserved.

Part # PW113
Description  Wideband Amplifier
PDF  4 Pages
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Manufacturer  SJM [SJM Prewell. All Rights Reserved.]
Direct Link  http://www.prewell.com/
Logo SJM - SJM Prewell. All Rights Reserved.

PW113 Datasheet(HTML) 1 Page - SJM Prewell. All Rights Reserved.

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1
Wideband Amplifier
SJM PREWELL
PW113
Products and product information are subject to change without notice. Version 0.9
Features
• 45 - 1500MHz
• Gain 20.5dB @ 45MHz
• CSO 60dBc @ 25dBmV
• CTB 72dBc @ 25dBmV
• NF 3.8dB @ 200MHz
• Lead-free / Green /
compliant SOT-89 Package
Description
The PW113 is a high performance InGaP HBT MMIC Amplifier and
consists of Darlington pair amplifiers with temperature compensation
that is internally matched to 75
Ω input/output. The features of
PW113 are high linear performance and high reliability as a CATV
amplifier and provide stable current variation over temperature. The
PW113 operates from a single voltage supply and requires only two
DC-blocking capacitors, a bias resistor and an inductor for operation.
The device is a general purpose CATV amplifier that offers high
dynamic range in a low cost surface-mounted plastic SOT-89
package. All devices are 100% RF and DC tested.
Specifications
1) Test Conditions : T=25°C, Supply Voltage=5V, 75ohm System
2) Note 1. Two Tones, 1MHz Spacing, 5dBm per Tone at Output
3) Note 2. fp=851.25MHz; Vp=Vo; fq=858.25MHz; Vq=Vo-6dB; fr=860.25MHz; Vr=Vo-6dB;
measured at fp+fq-fr =849.25MHz
4) Note 3. fp=55.25MHz; Vp=40dBmV, fq=805.25MHz; Vq=40dBmV, measured at fp+fq=860.5MHz
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Voltage
5
V
Device Current
150
mA
RF Power Input
10
dBm
Storage Temperature
-55 to 150
°C
Ambient Operating Temperature
-40 to 85
°C
Junction Temperature
187
°C
Parameter
Units
Typ.
Condition
S21
dB
20.5
45 ~ 1000MHz
S11
dB
-10
45 ~ 1000MHz
S22
dB
-12
45 ~ 1000MHz
CSO
dBc
60
25dBmV/132ch Flat
CTB
dBc
72
25dBmV/132ch Flat
OIP3
dBm
36.5
Note 1 2)
P1dB
dBm
19.0
Vo
dBmV
57.5
Note 2 3)
d2
dBc
60.8
Note 3 4)
NF
dB
3.8
V / I
V / mA
4.7 / 90
Rth
°C/W
73
4
1
2
3
ESD/MSL
1 ESD sensitive device. Observe
handling precautions.
2 HBM: Class 1C, JESD22-A114
3 CDM: Class C3 , JESD22-
C101F
4 MSL 3, J-STD-020
Functional Diagram
RF IN
GND
1
2,4
RF OUT / Bias
3
1) Stresses above the maximum values listed have may cause permanent damage to the device.
2) MTTF is more than 100 years.
Applications
• Headend
• Drop Amplifier
• Cable Modem
• Laser Diode Driver
• FTTH Receiver
• Optical Transmitter
• RFoG / MOCA


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