P0420HDB datasheet(2/8 Pages) UNIKC

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P0420HDB

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

200

±100

0.6

0.75

0.8

1.1

177

7.5

5.8

1.1

2.4

14.6

15.6

1.5

197

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

Forward Transconductance

VGS = 10V, ID = 2A

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 2A

VGS = 0V, VDS = 25V, f = 1MHz

Gate-Body Leakage

Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = 160V, VGS = 0V , TC = 100 °C

PARAMETER

SYMBOL

TEST CONDITIONS

VDS = VGS, ID = 250mA

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Ciss

VDS = 10V, ID = 2A

gfs

td(on)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

VGS(th)

Reverse Recovery Time

IF = 4A, VGS = 0V

VSD

trr

IF = 4A, dlF/dt = 100A / mS

Qrr

Reverse Recovery Charge

Continuous Current

UNITS

V(BR)DSS

LIMITS

STATIC

Qgd

Output Capacitance

Drain-Source Breakdown Voltage

VDD = 160V, ID = 4A, VGS = 10V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

VGS = 0V, ID = 250mA

Qgs

DYNAMIC

Input Capacitance

VDD = 100V,

ID = 4A, VGS = 10V

Forward Voltage

Total Gate Charge

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

VDS = 200V, VGS = 0V , TC = 25 °C

REV 1.0

2017/2/8

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