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P6015CSG Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P6015CSG Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  P6015CSG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3V DD = 50V , L = 1mH ,starting TJ = 25˚C. 1.82 °C / W RqJA 50 Junction-to-Case RqJC Gate-Source Voltage ID Avalanche Energy 3 TC= 100°C Operating Junction & Storage Temperature Range SYMBOL Pulsed Drain Current 1，2 Avalanche Current 3 IAS 16 EAS THERMAL RESISTANCE TYPICAL PD ID TC= 25 °C 150V Continuous Drain Current 2 TC= 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) 60mΩ @V GS = 10V 21A Drain-Source Voltage TC= 25 °C Power Dissipation Tj, Tstg W UNITS 60 13 128 mJ 27 150 ±12 68 IDM SYMBOL 21 LIMITS A V VGS VDS V MAXIMUM Junction-to-Ambient °C -55 to 150 REV 1.0 1 2014-11-10 |
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