YFW6N65A3-R datasheet(1/7 Pages) YFWDIODE

Part #	YFW6N65A3-R

Description	6A 650V N-channel enhancement mode field effect transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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1 / 7 page

N-CHANNEL MOSFET

6N65A

1 / 7

www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

6A 650V N沟道增强型场效应管

主要参数：

ID

6A

VDSS

650V

RDSON-typ(@VGS=10V)

1.65Ω

性能特点：



开关速度快



低导通电阻



低反向传输电容



低栅极电荷量



100%单脉冲雪崩能量测试



提升了dv/dt能力

机械性能：



注塑成型封装



适用任何位置安装



封装材料符合UL 94V-0燃烧防火等级标准



加工焊接峰值最高温度 275°C ；时间丌大于 10s



封装形式: TO-220AB, TO-220F, TO-263, TO-252, TO-251

G.栅极 D.漏极 S.源极

产品规格分类：

产品料号

封装形式

产品印字

包装方式

YFW6N65A1

TO-220AB

6N65AT

50PCS每管

YFW6N65A2

TO-220F(0.5mm)

6N65AF

50PCS每管

YFW6N65A3

TO-263

6N65AS

50PCS每管

YFW6N65A3-R

TO-263

6N65AS

800PCS每盘

YFW6N65A4

TO-251

6N65AMJ

75PCS每管

YFW6N65A5-R

TO-252

6N65AD

2500PCS每盘

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YFW6N65A3-R Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

YFW6N65A3-R Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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