IR1H40CSP datasheet(2/6 Pages) IRF

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IR1H40CSP

Bulletin I0149J rev. E 06/05

www.irf.com

Max. DC Reverse Voltage (V)

RWM Max. Working Peak Reverse Voltage (V)

Voltage Ratings

(1) Pulse Width < 300µs, Duty Cycle < 2%

F(AV) Max.Average Forward Current

1.0

50%duty cycle@T

PCB = 117 °C, rectangular wave form

FSM

Max.PeakOneCycleNon-Repetitive

250

5µs Sine or 3µs Rect. pulse

Surge Current @ 25°C

10ms Sine or 6ms Rect. pulse

Non-Repetitive Avalanche Energy

J = 25 °C, IAS = 2.0A, L = 5.0mH

Repetitive Avalanche Current

2.0

Current decaying linearly to zero in 1 µsec

Frequency limited by T

J max. Va = 1.5 x Vr typical

Parameters

Value Units

Conditions

Absolute Maximum Ratings

Following any rated

load condition and

with rated V

RRM applied

Part number

IR1H40CSP

Max.Junction Temperature Range (*)

-55 to150

°C

Tstg Max. Storage Temperature Range

-55 to150

°C

thJL Typ.Thermal Resistance Junction

°C/W DCoperation

to PCB

(**)

thJA Max.Thermal Resistance Junction

°C/W

to Ambient

Thermal-Mechanical Specifications

Parameters

Value

Units

Conditions

thermal runaway condition for a diode on its own heatsink

(**) Mounted 1 inch square PCB

(*) dPtot

dTj

Rth( j-a)

Max. Forward Voltage

(1)

0.48

0.52

@ 1A

J = 25 °C

Drop

0.53

0.57

@ 2A

* See Fig. 1

0.36

0.42

@ 1A

J = 125 °C

0.43

0.50

@ 2A

Max. Reverse Leakage (1)

µA

J = 25 °C

R = rated VR

Current

0.5

R = 20V

* See Fig. 2

0.2

0.5

R = 10V

0.15

0.3

R = 5V

2.5

J = 125 °C

R = rated VR

0.9

R = 20V

0.6

1.5

R = 10V

0.5

VR = 5V

Max. Junction Capacitance

160

VR = 5VDC (test signal range 100kHz to 1MHz) 25°C

dv/dt Max. Volatge Rate of Charge

10000 V/ µs (Rated VR)

Electrical Specifications

Parameters

Typ.

Max. Units

Conditions

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