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STM32H747AI Datasheet(PDF) 202 Page - STMicroelectronics |
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STM32H747AI Datasheet(HTML) 202 Page - STMicroelectronics |
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202 / 252 page ![]() Electrical characteristics STM32H747xI/G 192/242 DS12930 Rev 1 6.3.27 Temperature and VBAT monitoring 6.3.28 Voltage booster for analog switch Table 106. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -26 - KΩ Q Ratio on VBAT measurement - 4 - - Er(1) 1. Guaranteed by design. Error on Q –10 - +10 % tS_vbat(1) ADC sampling time when reading VBAT input 9 - - µs VBAThigh High supply monitoring - 3.55 - V VBATlow Low supply monitoring - 1.36 - Table 107. VBAT charging characteristics Symbol Parameter Condition Min Typ Max Unit RBC Battery charging resistor VBRS in PWR_CR3= 0 - 5 - KΩ VBRS in PWR_CR3= 1 1.5 - Table 108. Temperature monitoring characteristics Symbol Parameter Min Typ Max Unit TEMPhigh High temperature monitoring - 117 - °C TEMPlow Low temperature monitoring - –25 - Table 109. Voltage booster for analog switch characteristics(1) 1. Guaranteed by characterization results. Symbol Parameter Condition Min Typ Max Unit VDD Supply voltage - 1.62 2.6 3.6 V tSU(BOOST) Booster startup time - - - 50 µs IDD(BOOST) Booster consumption 1.62 V ≤ VDD ≤ 2.7 V - - 125 µA 2.7 V < VDD < 3.6 V - - 250 |
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