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STM32H747AI Datasheet(PDF) 205 Page - STMicroelectronics |
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STM32H747AI Datasheet(HTML) 205 Page - STMicroelectronics |
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205 / 252 page ![]() DS12930 Rev 1 195/242 STM32H747xI/G Electrical characteristics 221 tWAKEUP Wake up time from OFF state Normal mode CLOAD ≤ 50pf, RLOAD ≥ 4 kΩ, follower configuration -0.8 3.2 µs High speed mode CLOAD ≤ 50pf, RLOAD ≥ 4 kΩ, follower configuration -0.9 2.8 PGA gain Non inverting gain error value PGA gain = 2 −1- 1 % PGA gain = 4 −2- 2 PGA gain = 8 −2.5 - 2.5 PGA gain = 16 −3- 3 Inverting gain error value PGA gain = 2 −1- 1 PGA gain = 4 −1- 1 PGA gain = 8 −2- 2 PGA gain = 16 −3- 3 External non-inverting gain error value PGA gain = 2 −1- 1 PGA gain = 4 −3- 3 PGA gain = 8 −3.5 - 3.5 PGA gain = 16 −4- 4 Rnetwork R2/R1 internal resistance values in non-inverting PGA mode(2) PGA Gain=2 - 10/10 - kΩ/ kΩ PGA Gain=4 - 30/10 - PGA Gain=8 - 70/10 - PGA Gain=16 - 150/10 - R2/R1 internal resistance values in inverting PGA mode(2) PGA Gain = -1 - 10/10 - PGA Gain = -3 - 30/10 - PGA Gain = -7 - 70/10 - PGA Gain = -15 - 150/10 - Delta R Resistance variation (R1 or R2) - −15 - 15 % Table 111. Operational amplifier characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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