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CSL13003F Datasheet(PDF) 1 Page - Continental Device India Limited |
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CSL13003F Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page  Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTOR TO-92 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage VCBO Collector Emitter (sus) Voltage VCEO Emitter Base Voltage VEBO Collector Current Continuous IC Peak **ICM Power Dissipation @ Ta=25ºC PC Derate Above 25ºC Power Dissipation @ TLead=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Case, Tc=25ºC Rth (j-c) Junction to Lead Rth (j-L) Junction to Ambient in free air Rth (j-a) ` ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Base Voltage VCBO IC=1mA, IE=0 600 V Collector Emitter (sus) Voltage *VCEO (sus) IC=10mA, IB=0 400 V Collector Cut Off Current ICBO VCB=600V, IE=0 1.0 mA VCB=600V, IE=0, Tc=100ºC 5.0 mA Emitter Cut Off Current IEBO VEB=9V, IC=0 1.0 mA DC Current Gain *hFE IC=0.3A, VCE=2V (Note1) 10 30 IC=0.5A, VCE=2V 8.0 40 IC=1A, VCE=2V 4.0 25 Collector Emitter Saturation Voltage *VCE (sat) IC=0.5A, IB=0.1A 0.5 V IC=1A, IB=0.25A 1.0 V IC=1.5A, IB=0.5A 3.0 V IC=1A, IB=0.25A,Tc=100ºC 1.0 V Base Emitter Saturation Voltage *VBE (sat) IC=0.5A, IB=0.1A 1.0 V IC=1A, IB=0.25A 1.2 V IC=1A, IB=0.25A,Tc=100ºC 1.1 V * Pulse Test: PW=300 µµs, Duty Cycle=2% ** Pulse Test: Pulse Width=5ms, Duty Cycle=10% CSL13003Rev261103E 48.0 ºC/W 62.5 ºC/W VALUE 600 400 9.0 1.5 3.0 - 65 to +150 A A W ºC mW/ ºC 1.1 W UNIT V V V 8.8 mW/ ºC 113.6 2.0 16 ºC/W E C B Continental Device India Limited Data Sheet Page 1 of 5 |
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