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SEMICONDUCTOR

TECHNICAL DATA

FTK3443

Revision No : 0

P-Channel 20-V(D-S) MOSFET

FEATURE

Fast Switching Speed

Low Gate Charge

This P-Channel MOSFET is produced using advanced PowerTrench

process that has been especially tailored to minimize on-state resistance

and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation

In a very small footprint for applicationswhere the larger packages are impractical.

MARKING:

3

5

6

4

1

2

3

R43

DIM

MILLIMETERS

A

B

D

G

SOT-23-6L

2 92±0 1

1 6±0 1

2 8±0 15

0 4±0 1

0 1MAX

1 1±0 05

0 95

0 15±0 05

B1

H

C

T

G

1

3

2

B

B1

D

T

6

4

1 9±0 1

A1

5

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

c

r

u

o

S

-

n

i

a

r

D

DS

-20

Continuous Gate-Source Voltage

±8

V

I

t

n

e

r

r

u

C

n

i

a

r

D

s

u

o

u

n

i

t

n

o

C

D

A

4

-

Power Dissipation

0.35

W

Thermal Resistance from Junction to Ambient

357

℃/W

T

e

r

u

t

a

r

e

p

m

e

T

g

n

i

t

a

r

e

p

O

j

0

5

1

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

stg

-55 ~+150

℃