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PMLL4448 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMLL4448 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() 9397 750 14606 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 06 — 4 April 2005 3 of 11 Philips Semiconductors PMLL4148L; PMLL4448 High-speed switching diodes [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25 °C prior to surge 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA [2] When switched from IF = 50 mA; tr = 20 ns Tj junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C Table 6: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 350 K/W Rth(j-sp) thermal resistance from junction to solder point - - 300 K/W Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA - - 1000 mV PMLL4148L IF = 10 mA - - 1000 mV PMLL4448 IF = 5 mA 620 - 720 mV IR reverse current VR = 20 V - - 25 nA VR = 20 V; Tj = 150 °C --50 µA PMLL4448 VR = 20 V; Tj = 100 °C --3 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 4 pF trr reverse recovery time [1] --4 ns VFR forward recovery voltage [2] - - 2.5 V |
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